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| MDD 44 Diode Modules IFRMS = 2x 100 A IFAVM = 2x 64 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 3 1 2 TO-240 AA 2 1 3 MDD 44-08N1 B MDD 44-12N1 B MDD 44-14N1 B MDD 44-16N1 B MDD 44-18N1 B Symbol IFRMS IFAVM IFSM Test Conditions TVJ = TVJM TC = 92C; 180 sine TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine Maximum Ratings 100 A 64 A 59 A 1150 1300 1000 1200 6600 7000 5000 5950 -40...+150 150 -40...+125 A A A A A2s A2s A2s A2s C C C V~ V~ Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 q q q q q oi2dt TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT QS IRM RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies q q q q 3000 3600 Mounting torque (M5) Terminal connection torque (M5) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 200 A; TVJ = 25C For power-loss calculations only TVJ = TVJM TVJ = 125C; IF = 50 A, -di/dt = 0.64 A/ms per diode; DC current per module per diode; DC current per module 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g Characteristic Values 10 mA 1.60 0.8 4.3 90 11 0.59 0.295 0.79 0.395 12.7 9.6 50 V V mW mC A K/W K/W K/W K/W mm mm m/s2 Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits q q q q Dimensions in mm (1 mm = 0.0394") other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-3 MDD 44 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 oi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load (c) 2000 IXYS All rights reserved 2-3 MDD 44 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.59 0.61 0.63 0.66 0.70 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.012 0.045 0.533 ti (s) 0.0012 0.095 0.455 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.79 0.81 0.83 0.86 0.90 Constants for ZthJK calculation: i 1 2 3 4 (c) 2000 IXYS All rights reserved Rthi (K/W) 0.012 0.045 0.533 0.2 ti (s) 0.0012 0.095 0.455 0.495 3-3 |
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